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所在平台: Udemy |
课程主页: https://www.udemy.com/course/undergraduate-course-on-semiconductor-device-physics-ii/
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课程名称：半导体器件物理-II 本课程概述：本课程是关于半导体器件物理的本科课程，是该系列的第二部分。对于电子专业的学生而言，理解电荷载流子的输运现象、漂移电流、扩散电流、半导体的能带理论、电子-空穴对(EHPs)、二极管的结形成，以及将器件物理扩展到三端器件如BJT和MOSFET是非常必要的。前一课程“半导体器件物理-I”是顺利理解本课程的先决条件。 金属-氧化物-半导体组合形成电容器，需深入理解其电容效应，包括阈值电压和CV特性。虽然我们主要关注理想的MOS电容器，但也会在一定程度上讨论非理想情况。基于对MOS电容器的理解，如果我们观察三端器件MOSFET中电荷载流子的输运，就能对所有MOSFET结构（即增强型MOSFET和耗尽型MOSFET，分别在p型和n型衬底上）有一个完整的认识。本课程将深入讲解MOSFET直至阈值控制。 另一种晶体管是双极结晶体管(BJT)，本课程将阐述BJT的特性和器件参数，并涉及其输入和输出特性。 作者介绍：乌达雅·巴斯卡尔先生是一位本科大学水平的教师和GATE备考教师，拥有超过15年的教学经验。他的研究领域包括半导体、电子器件、信号处理、数字设计及其他电子学基础课程。他已经培训了数千名学生以备战GATE和ESE考试。 课程大纲：无
This is an undergraduate course on semiconductor device physics. This course is the second part in a series of two courses on semiconductor device physics.For any electronics student understanding transport phenomena of charge carriers, drift current, diffusion current, energy band theory of semiconductors, electron hole pairs(EHPs), Junction formation in a diode, extending the device physics to three terminal devices like BJT and MOSFET is necessary. My previous course "undergraduate course on semiconductor device physics-I" is a prerequisite for complete understanding of this course.Metal-Oxide-Semiconductor combination forms a capacitor and that capacitive action is to be understood well in terms of threshold voltage, CV characteristics. Though our major focus is on ideal MOS capacitor, non-idealities are also discussed up to some extent.Based on the knowledge of MOS capacitor, if we look at the transport of charge carriers in a three terminal device MOSFET it gives a complete picture of all MOSFET transistor structures namely, enhancement MOSFET & depletion MOSFET in both p-type and n-type substrates. A MOSFET is explained up to threshold control.Another transistor is Bipolar junction transistor(BJT). BJT characteristics and device parameters are explained with respect to input and output characteristics.About Author:Mr. Udaya Bhaskar is an undergraduate university level faculty and GATE teaching faculty with more than 15 years of teaching experience. His areas of interest are semiconductors, electronic devices, signal processing, digital design and other fundamental subjects of electronics. He trained thousands of students for GATE and ESE examinations.
