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所在平台: Udemy |
课程主页: https://www.udemy.com/course/microwave-solid-state-devices-made-easy/
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课程名称：固态活动微波器件 课程概述：本课程旨在帮助学习者理解在微波下的固态活动器件及其应用。由于半导体技术的发展，我们能够制造成本低、操作电压低且小型化的固态源。固态微波器件的优势在于其使用寿命长、低电压需求、易于控制发射波形的幅度、宽带宽、生产成本低及安装简便。本课程涉及的固态微波器件包括隧道二极管、甘二极管、读出二极管、IMPATT二极管、BARITT二极管、TRAPATT二极管、可变电容二极管等。这些器件被广泛应用于微波系统中，用于生成、放大或检测微波信号。它们体积小巧，常集成在印刷电路板上。然而，它们在10GHz以上的频率下存在低效率、高噪声、调谐范围小以及对温度依赖性强等主要缺点。 固态器件根据电特性可分为非线性电阻型、非线性电抗型、负阻型和可控阻抗型。根据设备类型，固态微波器件可以分为点接触二极管、肖特基势垒二极管、金属氧化物半导体器件和金属绝缘体器件。科学家们为设计双端口器件做出了大量努力。隧道二极管是一种基本的双端口器件，具有正向偏置、重掺杂的p-n结二极管。随着转移电子器件和雪崩过渡时间器件的开发，这些器件能够在负阻区域工作。
The course contents are useful to understand active solid state devices under microwave and there applications. The development of semiconductor technology helps us to fabricate low cost, low voltage operation and miniaturized solid state source. The Solid state microwave devices are advantageous as longer life, require low voltage, easy control of amplitude of the transmitted waveform, wider bandwidths, low production cost and easy to install. The solid state microwave devices that specify in this course are Tunnel Diode, Gunn Diode, Read Diode, IMPATT Diode, BARITT Diode, TRAPATT Diode, Varactor Diode, etc. Theses solid state microwave devices are widely used in microwave system for generation, amplification, or detection of microwave signal. These devices are compact and integrated in a printed circuit board. They are suffering from major drawback of low efficiency above 10GHZ, high noise, small tuning range, and more dependence of frequency on temperature. Solid state devices are categorized based on electrical characteristics such as nonlinear resistance type, nonlinear reactance type, negative resistance type, controllable impedance type. Solid state microwave device can be categorized based on point contact diode, Schottky barrier diode, metal oxide semiconductor devices and metal insulator devices. Scientist has made numerous efforts to design two terminal devices. A tunnel diode is basically two terminal devices, forward biased, heavily doped p-n junction diode. The transferred electron devices and avalanche transit time device developed, they can work at negative resistance region.
