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所在平台: Udemy |
课程主页: https://www.udemy.com/course/ltspice-design-a-99-efficient-buck-converter/
课程评论：没有评论
Coursera 课程摘要：99% 效率降压转换器设计 本课程将通过完全的实践操作，指导您如何设计一款效率高达 99% 的降压转换器。课程将深入探讨在 LTspice 中使用真实元件模型进行设计时必须考虑的各种因素，并重点分析哪些因素是导致降压转换器效率下降的主要原因。 课程将直接或间接涵盖以下元件的关键参数： * **二极管 (Diode)**：正向电压、电流能力、击穿电压、反向电流、结电容。 * **MOSFET**：导通电阻、栅极电容与栅极电荷（及其它影响开关行为的电容）、栅极上升/下降时间、开关频率、死区时间、体二极管导通、栅极驱动要求、安全工作区 (SOA)、直通电流（高低侧 MOSFET 同时导通时的电流）。 * **电容 (Capacitor)**：等效串联电阻 (ESR)、等效串联电感 (ESL)、并联电阻。 * **电感 (Inductor)**：等效串联电阻 (DCR)、等效串联电容、并联电容。 **请注意**：本课程**不**包含以下在实际世界设计中同样重要但未被深入讨论的主题： * **二极管**：正向电压、电流、反向电流和结电容随温度的变化；不同温度下的浪涌电流能力。 * **MOSFET**：所有上述参数的温度依赖性；栅极驱动器死区时间的偏差（抖动）；MOSFET 的 dV/dt 鲁棒性（Vds 电压的最大变化率）；允许的最大功耗（随温度）；体二极管的电流能力。 * **电容**：电容的频率和温度依赖性；允许的最大功耗（随温度）；不同温度下的纹波电流能力；温度和纹波电流导致的や老化效应；声噪限制（MLCC 压电效应）。 * **电磁兼容性 (EMC)**：辐射发射限制、抗扰度要求。 * **法规要求**：CE、FCC 等认证；危险区域要求；限制有害物质进出口的法律（如 RoHS）。
This course will show you how to design a 99% efficient buck converter. It will be 100% hands on instead of using PowerPoint slides.When using real component models in LTspice, you have to consider many factors during your component selection.This course will help you to find out which effects are the main causes for a decrease in efficiency of a buck converter.Following terms will be directly or indirectly covered during this course:Diode: * Forward Voltage * Current Capability * Breakdown Voltage * Reverse Current * Junction CapacitanceMOSFET: * On Resistance * Gate Capacitance and Gate Charge as well as other capacitances that influence the switching behavior * Gate Rise Time and Gate Fall Time * Switching Frequency * Dead Time * Current Conduction via Body Diode * Gate Driving Requirements * Safe Operating Area (SOA) * Shoot-Through Current (Current that flows when High-Side and Low-Side MOSFET are on at the same time)Capacitor: * Series Resistance * Series Inductance * Parallel ResistanceInductor: * Series Resistance * Series Capacitance * Parallel CapacitanceFollowing topics are not being discussed in this course, but are still important for a real world design:Diode: * Temperature dependence of Forward Voltage and Current, Reverse Current and Junction Capacitance * Surge Current capability over TemperatureMOSFET: * Temperature dependence of all above-mentioned topics * Variation of Dead time of the Gate Driver (Jitter) * dV/dt ruggedness of MOSFET (maximum change rate VDS voltage) * Maximum allowed Power Dissipation over Temperature * Current Capability of Body DiodeCapacitor: * Frequency and Temperature dependence of Capacitance * Temperature dependent allowable Maximum Power Dissipation * Ripple Current Capability over Temperature * Aging Effects due to Temperature and ripple current * Acoustic noise Emission limits (MLCC piezoelectric effect)Electromagnetic Compatibility: * Emission Limits * Immunity RequirementsRegulatory Requirements: * CE, FCC,. * Hazardous Area Requirements * Laws limiting import and export of Hazardous Substances (e.g. RoHS)
