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所在平台: Udemy |
课程主页: https://www.udemy.com/course/electronics-diode-a-thorough-understanding-part-1/
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课程名称：电子学：二极管（第一部分）- 固体状态方法 课程概述：本课程旨在教授二极管的基本原理，并带领学员初步进入电子学的世界。课程重点讲解二极管作为一种固态器件的特性，深入分析在不同施加电压下二极管内部的工作情况。我们将重点学习P-N结半导体二极管的基本概念，包括能带图、耗尽区、电场等相关属性。课程中将通过示例进一步阐明这些概念。 主要内容包括： 1. 二极管内部的工作机制与物理现象。 2. 电势与平衡下耗尽层的数学表达式。 3. 准费米能级与能带图的讨论。 4. 正向偏置下载流子浓度与距离的关系及其数学表达式。 5. 正向偏置下电流密度与距离的关系及其数学表达式。 6. 对“切割电压”与“内建电压”的常见误解进行澄清。 7. 不同偏置条件下二极管的电流-电压特性（V-I特性）。 8. 理解二极管功能发生器和二极管传输函数发生器的原理。 9. 反向偏置条件下二极管的特性探讨。 10. 讨论击穿现象，包括雪崩击穿和齐纳击穿。 通过本课程，学员将能够掌握二极管的基本工作原理，并为深入学习电子学奠定基础。
Learn the fundamentals of Diodes and take the first leap to the world of Electronics. This course is on Diode as a Solid State Device. In this course we will thoroughly learn what happens inside a Diode under various applied voltages. So lets have a highlight of the entire course quickly-Understand the fundamentals of P-N Junction Semiconductor diode. In this lecture we will understand the Diode from Solid State approach, that is we will learn what actually happens inside the Diode under different circumstances.Properties of P-N Junction Semiconductor diode (Concept of Energy Band Diagram, Depletion Width, Electric Field at the junction etc). Examples have also been included to further clarify the concepts.Mathematical expressions for Electric potential, Depletion Layer under Equilibrium.Discussion on Quasi-Fermi level and Energy Band Diagram plot.Carrier concentration as a Function of distance under applied forward bias. Its mathematical expressions have also been derived.Current Density as a function of distance under applied forward bias. Its mathematical expressions have also been derived.A common misunderstanding- Cut in voltage VS Built in voltage.V-I Characteristics of Diode under different bias conditions.Understand Diode function Generator & Diode Transfer-function Generator.Diode properties under reverse biased condition.Discussion on Breakdown phenomena-Avalanche Breakdown & Zener Breakdown.
