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所在平台: Udemy |
课程主页: https://www.udemy.com/course/electronic-devices-for-gate/
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课程名称：电子器件与GATE考试 课程概述：近年来，电子器件在工程研究生入学考试(GATE)中的重要性逐渐上升，尤其是在电子与通信领域。预计电子器件这一科目将对总分贡献约12分。因此，理解器件物理对于解决GATE标准问题至关重要。GATE考生必须掌握电荷载流子的输运现象、漂移电流、扩散电流、半导体能带理论、电子-孔对(EHPs)、二极管的结形成，并进一步研究三端器件如BJT和MOSFET。 课程内容： - **第一部分**：课程开始于半导体器件物理所需的基础知识，包括一些量子物理基础概念。 - **第二部分**：详细讲解半导体的能带理论及费米-狄拉克分布函数，介绍本征和外延半导体，结合历年GATE题目进行分析。 - **第三部分**：输运现象，包括迁移率、导电性、扩散系数以及“爱因斯坦关系”和连续性方程，定量与定性分析结合，帮助考生解决GATE问题。 - **第四部分**：pn结二极管理论，包括接触电位、最大场强、电荷密度分布，以及前向和反向偏置条件下的能带结构。同时，定量分析二极管电流、电容特性和开关时间，并解答历年GATE题目。 - **第五部分**：深入讲解齐纳二极管、光电器件（如光电二极管、LED和太阳能电池），并结合历年GATE题目。 - **第六部分**：对MOS电容进行详细分析，解决历年GATE问题，帮助学生深入理解。 - **第七部分**：解释MOSFET的结构、工作原理、VI特性，覆盖增强型和耗尽型器件，解决历年GATE题目。 - **第八部分**：分析双极结晶体管（BJT）的npn和pnp配置，进行必要的定量分析。 课程结束后，学员将能有效解答与电子器件及半导体物理相关的任何GATE、ESE及公用事业单位的挑战性问题。 作者介绍：乌达亚·巴斯卡先生是一位本科大学讲师及GATE教员，拥有超过15年的教学经验。他的研究领域包括半导体、电子器件、信号处理、数字设计以及其他电子学基础学科，曾培训数千名学生备战GATE和ESE考试。
The prominence of electronic devices is increasing in Graduates Aptitude test in engineering(GATE)-Electronics and Communications year on year. we can expect an average 12 marks from this subject electronic devices. Understanding device physics is quite essential to solve GATE standard questions. For any GATE aspirant understanding transport phenomena of charge carriers, drift current, diffusion current, energy band theory of semiconductors, electron hole pairs(EHPs), Junction formation in a diode, extending this study to three terminal devices like BJT and MOSFET is necessary. Section-01:This course begins with a briefing on the fundamentals that are required to understand semiconductor device physics including some quantum physics fundamentals. Section-02:Energy band theory of semiconductors is explained with fermi Dirac distribution function. Intrinsic, extrinsic semiconductors are explained from the purview of energy band theory. Previous year GATE questions are explained.Section-03:Transport phenomenon talks about mobility, conductivity, Diffusion coefficient and the most important "Einstein's relation" along with continuity equation. These topics are treated quantitatively along with the necessary qualitative analysis required to solve GATE questions.Section-04:Based on this knowledge, pn junction diode theory is well explained. It covers contact potential, Maximum field intensity, charge density profile along with the necessary energy band structures in forward bias and reverse bias conditions. The second part of junction diode theory focuses on the quantitative analysis of diode currents, diode capacitive behavior and diode switching times. Previous year GATE questions are solved.Section-05:Zener diode, opto electronic devices like photo diode, LED and solar cell are extensively covered with all previous year GATE questions.Section-06:MOS capacitor detailed analysis is provided for deep understanding. Previous GATE questions are solvedSection-07:MOSFET structure, operation, VI characteristics are explained in enhancement and depletion mode devices with all previous year GATE questions.Section-08:Bipolar junction transistor is explained in npn and pnp configurations with necessary quantitative analysis.By the end of this course student is able to solve any kind of challenging question in GATE, ESE and any other PSU related to electronic devices and semiconductor device physics.About Author:Mr. Udaya Bhaskar is an undergraduate university level faculty and GATE teaching faculty with more than 15 years of teaching experience. His areas of interest are semiconductors, electronic devices, signal processing, digital design and other fundamental subjects of electronics. He trained thousands of students for GATE and ESE examinations.
