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课程主页: https://www.coursera.org/archive/transistor-field-effect-transistor-bipolar-junction-transistor
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University of Colorado Boulder
In this module on MOS devices, we will cover the following topics:, MOS device structure, energy band diagram for MOS device at equilibrium, Flat band condition, Accumulation, Depletion, and Inversion of MOS under bias, Energy band diagram and charge distribution for MOS in inversion, Quantitative model and relevant parameters, Energy band diagram with channel bias, Inversion layer charge, and Effect on threshold voltage of MOS in non-equilibrium, C-V characteristics: Charge distribution under different biasing conditions, C-V characteristics: Frequency dependence, Effects of oxide charge on flat band and threshold voltages in non-ideal MOS, and Types of oxide charge in non-ideal MOS.
This course can also be taken for academic credit as ECEA 5632, part of CU Boulder’s Master of Science in Electrical Engineering degree. This course presents in-depth discussion and analysis of metal-oxide-semiconductor field effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, modes of operation, switching and current amplifying behaviors. At the end of this course learners will be able to: 1. Understand and analyze metal-oxide-semiconductor (MOS) device 2. Understand and analyze MOS field effect transistor (MOSFET) 3. Understand and analyze bipolar junction transistor (BJT)
