Transistor - Field Effect Transistor and Bipolar Junction Transistor

所在平台: Coursera

课程主页: https://www.coursera.org/learn/transistor-field-effect-transistor-bipolar-junction-transistor

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课程简介

课程名称：晶体管 - 场效应晶体管与双极结晶体管 概述：本课程可作为学分课程修读，课程代码为 ECEA 5632，属于科罗拉多大学博尔德分校电气工程硕士学位的一部分。课程深入讨论和分析金属氧化物半导体场效应晶体管（MOSFET）和双极结晶体管（BJT），包括平衡特性、工作模式、开关行为和电流放大行为。 学习目标： 1. 理解并分析金属氧化物（MOS）器件。 2. 理解并分析金属氧化物场效应晶体管（MOSFET）。 3. 理解并分析双极结晶体管（BJT）。 课程大纲： 1. **金属氧化物（MOS）器件** - 主题包括：MOS器件结构、平衡状态下的能带图、平带条件、在偏置下的积累、耗尽和反转、反转时的能带图和电荷分布、定量模型与相关参数、通道偏置下的能带图、反转层电荷、非平衡条件下的阈值电压影响、不同偏置条件下的C-V特性、频率依赖性、非理想MOS中氧化物电荷对平带和阈值电压的影响，及非理想MOS中的氧化物电荷类型。 2. **金属氧化物场效应晶体管（MOSFET）** - 主题包括：MOSFET的发展历史、器件结构、器件类型、电路符号、长通道理论、I-V特性、工作模式、通道长度调制、体偏效应、体电荷效应、阈下导电、短通道器件中的源/漏电荷共享、漏诱导势垒降低、次表面穿透、迁移率退化、速度饱和、漏电流饱和、以及随着通道长度缩放的漏电流和速度。 3. **双极结晶体管（BJT）** - 主题包括：BJT器件结构、能带图、主动偏置、漏电流、基区重组、霍尔注入、基区非均匀掺杂、单位增益、BJT的开关特性、单异质结BJT、双异质结BJT、非均匀材料、早期效应、发射极偏置依赖、高水平注入、基极、发射极和集电极的传输时间，以及RC时间常数。 通过本课程，学习者将全面掌握MOS和BJT的理论和应用，为电气工程领域的进一步研究打下坚实基础。

课程大纲

Name:Metal-Oxide-Semiconductor (MOS) Device

Description:In this module on MOS devices, we will cover the following topics:, MOS device structure, energy band diagram for MOS device at equilibrium, Flat band condition, Accumulation, Depletion, and Inversion of MOS under bias, Energy band diagram and charge distribution for MOS in inversion, Quantitative model and relevant parameters, Energy band diagram with channel bias, Inversion layer charge, and Effect on threshold voltage of MOS in non-equilibrium, C-V characteristics: Charge distribution under different biasing conditions, C-V characteristics: Frequency dependence, Effects of oxide charge on flat band and threshold voltages in non-ideal MOS, and Types of oxide charge in non-ideal MOS.

Name:MOS Field Effect Transistor (MOSFET)

Description:In this module on MOSFETs (metal-oxide semiconductor field effect transistors), we cover the following topics: History of development of MOSFETs, Device structure, Device types, Circuit symbols, Long channel theory, I-V characteristics, Modes of operation, Channel length modulation, Body bias effect, Bulk charge effect, Sub-threshold conduction, Source/drain charge sharing in short channel devices, Drain induced barrier lowering, Subsurface punchthrough, Mobility degradation, Velocity saturation, Drain current saturation, Scaling of drain current with channel length, and Scaling of speed with channel length.

Name:Bipolar Junction Transistor (BJT)

Description:In this module on BJTs (bipolar junction transistors), we will cover the following topics: BJT Device structures, Energy band diagrams, Active bias, Leakage current, Recombination in base, Hoe injection, Non-uniform doping in base, Current gain, Switching with BJT, Single heterojunction bipolar transistor, Double heterojunction bipolar transistor, Non-uniform material, Early effect, Emitter bias dependence, High-level injection, Base, emitter and collector transit times, and RC time constant.

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