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所在平台: Coursera |
课程主页: https://www.coursera.org/learn/mosfet
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课程名称：MOS晶体管 课程概述：本课程旨在深入探讨MOS晶体管的工作原理及其建模方法。这些知识对于设备建模人员以及高性能电路的设计者至关重要。请注意，此版本的课程基于早期版本进行调整，当前版本不由讲师或原助教主持，也不提供结业证书。 课程大纲： 1. 课程介绍与MOS晶体管概述：欢迎加入“MOS晶体管”课程，期待与您共同学习。 2. 预备知识与背景：为后续内容奠定基础。 3. 双端口与三端口MOS结构：讲解不同的MOS结构。 4. 长通道MOS晶体管 - 第一部分：核心内容，需深入学习。 5. 长通道MOS晶体管 - 第二部分：继续讨论直流工作下的长通道晶体管。 6. 小尺寸效应 I：探讨在小尺寸下晶体管的现象，现代设备的重要知识。 7. 小尺寸效应 II；电路仿真建模：讨论电路仿真模型及其建立的重要性。 8. 大信号动态操作：讨论晶体管的端子电压随时间变化的情况。 9. 小信号建模 I：小信号建模的重要性，涉及模拟电路设计。 10. 小信号建模 II：在高频应用中进行小信号建模。 11. 期末考试：开放书本、笔记和视频，考试内容涵盖前九周的知识；禁止与任何人讨论考试。 12. 课程结束：虽然期末考试不考察此部分内容，但建议学习有关噪声、离子注入和基底非均匀性等重要主题，以完善对MOS晶体管的理解。 通过此课程，学习者将掌握MOS晶体管的基本与进阶概念，适用于现代电路设计与建模。
Name:About This Course and Overview of the MOS Transistor
Description:Welcome to the “MOS Transistors” course! We are very excited to be able to offer this course, and are looking forward to working with you.
Name:Preliminaries and Background
Description:
Name:The Two-Terminal and Three-Terminal MOS Structures
Description:
Name:The Long-Channel MOS Transistor – Part 1
Description:This is the first module we are dealing with the complete transistor; much of this material, as well as next module's material, will form the core of what we will be covering in the rest of the course. We hope you will spend extra time studying to make sure you understand this material in depth. The total viewing time in each of these two modules is shorter, which should help.
Name:The Long-Channel MOS Transistor – Part 2
Description:This material concludes the lectures on the long-channel transistor in DC operation. As mentioned earlier, these lectures will form the core on which many of our subsequent discussions will be based.
Name:Small-Dimension Effects 1
Description:In this module we are dealing with phenomena that occur when the transistor dimensions are made small; this is important knowledge to have when one is dealing with modern devices.
Name:Small-Dimension Effects 2; Modeling for Circuits Simulation
Description:This module we will finish with small dimension effects, and then talk about models for circuit simulation (the circuit designers among you are probably already using such models). We discuss what it takes to make a good model for circuit simulation (among other things: a lot of caution and care, and about 20,000 lines of code!), and how you can spot possible problems with such models. Although models for circuit simulation include capabilities we have not yet discussed, such as charge modeling, we think you know enough about models at this point to be able to follow this general discussion (which is out of sequence – it’s from Chap. 10 in the book, where you can find much more on the subject).
Name:Large-Signal Dynamic Operation
Description:In this module there is a significant departure from what we have done up to this point: we will allow the terminal voltages of the transistor to vary with time. We will determine the resulting terminal currents, which will now include a “charging” component. We will do this both for moderate and for very high “speeds”. The transient response of circuits involves similar calculations, only done by computer for an ensemble of transistors and other devices.
Name:Small-Signal Modeling I
Description:The material for this module deals with small-signal modeling, and constitutes an important part of the description of MOS transistor behavior. It relates small changes in terminal voltages to the resulting small changes in currents. Small-signal modeling is key to analog circuit design, but not only; it is also used in high-performance digital circuit design (e.g., in designing memory sense amplifiers).
Name:Small-Signal Modeling II
Description:This material concludes our discussion of small-signal modeling; it shows how we can model the transistor at frequencies at which the simple model we derived last week is not valid. Such modeling is important in high-frequency applications, e.g. transceiver design.
Name:Final Exam
Description:The exam is open book, open notes, open videos. It covers the material of the first nine weeks of videos in the course. You are NOT allowed to discuss the exam, directly or indirectly, with anyone. Anybody found in violation of this rule will be removed from the course. You should, of course, feel free to report technical issues with the exam and its submission.
Name:End of Course
Description:Although your knowledge of this material will not be tested in the final exam, we urge you to go through it, as it deals with important topics, namely noise, ion implantation and substrate nonuniformity, and statistical variability; these topics will help complete your understanding of MOS transistors.
PLEASE NOTE: This version of the course has been formed from an earlier version, which was actively run by the instructor and his teaching assistants. Some of what is mentioned in the video lectures and the accompanying material regarding logistics, book availability and method of grading may no longer be relevant to the present version. Neither the instructor nor the original teaching assistants are running this version of the course. There will be no certificate offered for this course. Learn how MOS transistors work, and how to model them. The understanding provided in this course is essential not only for device modelers, but also for designers of high-performance circuits.
