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所在平台: Coursera |
课程主页: https://www.coursera.org/learn/diode-pn-junction-metal-semiconductor-contact
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课程名称：二极管 - pn结与金属半导体接触 课程概述： 此课程可作为学分课程，编号为ECEA 5631，属于科罗拉多大学博尔德分校电气工程硕士学位的一部分。该课程深入讨论和分析pn结及金属-半导体接触，包括平衡行为、在偏置下的电流与电容响应、击穿、非整流行为及表面效应。学员将通过复杂的分析和电子设备的应用进行学习。 学习目标： 1. 分析平衡状态下和偏置下的pn结的电容和电流特性及击穿行为。 2. 分析平衡状态下和偏置下的金属-半导体接触的电容和电流特性、非整流接触和表面效应。 课程大纲： 1. pn结的平衡状态： - 介绍pn结的器件结构及其平衡状态下的能带图。 - 学习步跃结的耗尽近似、泊松方程、以及异质结的能带图和带对齐的影响。 2. 偏置下的pn结： - 探讨偏置下pn结的能带图、容量-电压特性。 - 讨论冲击电离、雪崩击穿、隧穿电流、以及热释电流等现象。 3. 金属-半导体接触： - 理解金属-半导体接触的器件结构和平衡能带图。 - 学习电场对势垒高度的影响，施加偏压后的能带图及相关电流模型。 4. 光电设备： - 介绍LED的基本工作原理、蓝光LED与固态照明。 - 讨论半导体激光的基本原理、光电二极管及其工作特性。 通过本课程，学员将获得在pn结和金属-半导体接触领域的全面理解，并能够应用这些知识于实际电子设备中。
Name:PN Junction at Equilibrium
Description:In this module, we look at pn junction in equilibrium. Topics include: Device structure for pn junction, Energy band diagram at equilibrium for pn junction, Depletion approximation for step junction, Poisson's equation for step junction, Energy band diagram of pn step junction, Beyond depletion approximation, Poisson's equation, Energy band diagram for linearly graded junction, Energy band diagram for heterojunction, and Effect of band alignment for heterojunction.
Name:PN Junction Under Bias
Description:In this module on pn junction under bias, we will cover the following topics: Energy band diagram of pn junction under bias, Capacitance-voltage characteristics, Impact ionization, Avalanche breakdown, Avalanche breakdown voltages, Tunneling current, Zener breakdown, Energy band diagram of pn junction under forward bias, Continuity equation, Boundary conditions, Ideal diode equation, Long- and short-base diodes, Recombination and generation in depletion region, Non-ideal current, Effect of band alignment, and Diffusion and thermionic emission currents.
Name:Metal-Semiconductor Contact
Description:In this module on metal semiconductor contacts, we will cover the following topics: Device structure, Equilibrium energy band diagram, Electrostatic analysis, Energy band diagram under bias, Capacitance-voltage characteristics, Image charge, Dependence of barrier height on electric field, Energy band diagram of Schottky contact under bias, Thermionic emission current, Ohmic contact by heavy doping in semiconductor, Ohmic contact by low metal work function, Surface states, Fermi level pinning.
Name:Optoelectronic Devices
Description:In this module on LEDs, we will cover the follow topics: Basic operating principles of LEDs, Survey of LEDs, Blue LED and solid state lighting, Basic principle of semiconductor laser, Condition for net stimulated emission, Types of semiconductor laser, Photodiode, Avalanche photodiode, Solar cell operating principle, and I-V characteristics and power output.
This course can also be taken for academic credit as ECEA 5631, part of CU Boulder’s Master of Science in Electrical Engineering degree. This course presents in-depth discussion and analysis of pn junction and metal-semiconductor contacts including equilibrium behavior, current and capacitance responses under bias, breakdown, non-rectifying behavior, and surface effect. You'll work through sophisticated analysis and application to electronic devices. At the end of this course learners will be able to: 1. Analyze pn junction at equilibrium and under bias, capacitance and current characteristics, and breakdown behavior 2. Analyze metal-semiconductor contact at equilibrium and under bias, capacitance and current characteristics, non-rectifying contact and surface effects
